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High quality sf6 reaction in UGANDA

High quality sf6 reaction in UGANDA

Reactive ion etching of GaN in SF6 + Ar and SF6 + N2.29/10/2008· Reactive ion etching (RIE) of GaN using SF 6 + Ar and SF 6 + N 2 plasma has been carried out. An improvement in etch rate is observed with SF 6 + Ar over SF 6 + N 2 plasma. Schottky diodes fabricated on the etched surface show the evidence of damage.Cited by: 4

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